Semiconductor light-emitting device capable of having good stabi

Details Semiconductor light-emitting device capable of having good stabi Semiconductor light-emitting device capable of having good stabi

1996-06-19

1998-02-10

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 318

Patent

active

057177090

ABSTRACT:
A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.

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