RF power amplifying circuit device

Details RF power amplifying circuit device RF power amplifying circuit device

1996-04-04

1998-02-10

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257700, 257702, 257706, 257723, 257724, 257532, H01L 2701, H01L 2348, H01L 2332

Patent

active

057172498

ABSTRACT:
A plurality of ceramic substrates are stacked in layers to form a multilayer structure. A semiconductor chip having an FET or the like is mounted on the uppermost first ceramic substrate to form an RF matching circuit. A ground layer is formed on the second ceramic substrate, i.e., in a middle layer, thereby preventing the interference of electric signals between circuit components mounted in the respective layers upper and lower than the ground layer. A bias circuit is formed on the top face of the third ceramic substrate, while a back-face ground electrode is formed on the back face of the third ceramic substrate. A leadless electrode is formed over the side faces of the respective ceramic substrates and the back face of the lowermost third ceramic substrate. By utilizing the high heat conductivity and proper dielectric constant of aluminum nitride, the overall RF power amplifying circuit device can be miniaturized at lower cost.

REFERENCES:
patent: 4644096 (1987-02-01), Gutierrez et al.
patent: 4849284 (1989-07-01), Arthur et al.
patent: 4888247 (1989-12-01), Zweben et al.
patent: 5200810 (1993-04-01), Wojnarowski et al.
patent: 5371405 (1994-12-01), Kagawa
patent: 5387888 (1995-02-01), Eda et al.
patent: 5410179 (1995-04-01), Kornrumpf et al.
patent: 5426405 (1995-06-01), Miller et al.
patent: 5559363 (1996-09-01), Immorlica, Jr. et al.

Affiliated with

Also associated with

Rating

RF power amplifying circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with RF power amplifying circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF power amplifying circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2079358