Epitaxial growth of silicon or germanium by electrodeposition fr

Chemistry: electrical and wave energy – Processes and products

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204 39, 204 60, 204 64R, 204 71, C25B 100, C25D 366, C25D 502, C25C 300

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039830128

ABSTRACT:
A method for electrodepositing an epitaxial crystal layer of germanium or silicon onto a single crystal substrate formed of germanium or silicon less noble than the layer. The substrate forms the cathode of an electrolytic cell containing a fused electrolytic salt bath which includes a salt source of plating ion (e.g., dipotassium silicon hexafluoride) and at least one alkali metal fluoride as the bath solvent. A vacuum is applied to remove gaseous impurities from the bath. Essentially all oxide is removed from the bath prior to electrolysis by reaction with a reagent (e.g., hydrogen fluoride) to form water vapor which is removed from the system by the vacuum. The bath may be doped with a different type or level of dopant than the substrate to form a junction.

REFERENCES:
patent: 2892763 (1959-06-01), Stern et al.
patent: 3022233 (1962-02-01), Olstowski
patent: 3219561 (1965-11-01), Monnier et al.
patent: 3254010 (1966-05-01), Monnier et al.
patent: R25630 (1964-08-01), Cook
J. J. Cuomo et al., J. Electrochemical Soc., p. 146c, June 1967.

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