Method of making split gate flash EEPROM cell by separating the

Details Method of making split gate flash EEPROM cell by separating the Method of making split gate flash EEPROM cell by separating the

1996-03-13

1998-02-10

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 70, 437979, H01L 218247

Patent

active

057168652

ABSTRACT:
The flash EEPROM cell of split-gate type according to the present invention can prevent the degradation of the tunnel oxide film of the cell due to the band-to-band tunneling and the secondary hot carrier which are generated by a high electric field formed at the overlap region between the junction region and the gate electrode when programming and erasure operations are performed by a high voltage to the structure in which the tunneling region is separated from the channel with a thick insulation film.

REFERENCES:
patent: 5049516 (1991-09-01), Arima
patent: 5231041 (1993-07-01), Arima et al.
patent: 5445984 (1995-08-01), Hong et al.
patent: 5550073 (1996-08-01), Hong

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