Fishing – trapping – and vermin destroying
Patent
1996-01-22
1998-02-10
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437191, 437 45, H01L 218247
Patent
active
057168644
ABSTRACT:
A first insulating film for the formation of a gate insulating film is formed on a semiconductor substrate having a memory cell forming region and a peripheral transistor forming region. A first conductive film for the formation of a floating gate is formed on the first insulating film, and a second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film for protecting the second insulating film, and a protective film performing the functions of an oxidation-resistant film, a washing-resistant film and an etching resistant film is formed on the second conductive film. Then, the peripheral transistor region is subjected to a predetermined process. A third conductive film, which will become a control gate of the memory cell and a gate of the peripheral transistor, is formed on the second conductive film and the peripheral transistor forming region subjected to the predetermined process.
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patent: 5188976 (1993-02-01), Kume et al.
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Chaudhari Chandra
NKK Corporation
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