Semiconductor laser having an inverted layer in a stepped offset

Details Semiconductor laser having an inverted layer in a stepped offset Semiconductor laser having an inverted layer in a stepped offset

1983-06-17

1986-04-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 47, H01S 319

Patent

active

045817430

ABSTRACT:
An active layer and semiconductor layers putting both sides of the active layer which constitute a double hetero junction construction in a semiconductor crystal comprise a semiconductor of the same kind of conductive type. The double hetero junction portion is formed with an offset portion by a stepped portion. The active layer in the offset portion is formed with a P-N junction portion in a lateral direction. The P-N junction portion is formed by an inverted layer in which different kinds of conductors are diffused in a region from the surface of the semiconductor crystal to the offset portion.

REFERENCES:
patent: 4347611 (1982-08-01), Seifres et al.
patent: 4456999 (1984-06-01), Sugino et al.

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