Thyristor cathode and transistor emitter structures with insulat

Details Thyristor cathode and transistor emitter structures with insulat Thyristor cathode and transistor emitter structures with insulat

1979-04-09

1986-04-08

Clawson, Jr., Joseph E.

357 20, 357 36, H01L 2974

Patent

active

045816263

ABSTRACT:
A gate turn-off (IGTO) thyristor having short turn-off times and high di/dt and dV/dt capabilities comprises an insulating layer overlying the inner region of the n2-emitter (cathode) region which includes a central region of greater resistivity than the n2-emitter cathode region for reducing turn-off current density of the device. The addition of an insulating layer and a central region of increased resistivity to the central portions of a base region of a bipolar transistor provides similar improved performance characteristics.

REFERENCES:
patent: 3430115 (1969-02-01), Webb
patent: 3432920 (1969-03-01), Rosenzweig
patent: 3619738 (1971-11-01), Otsuka
patent: 3902188 (1975-08-01), Jacobson
J. Gillett, "Power Transistor Having Increased Reverse Bias Safe Operating Area," IBM Tech. Discl. Bull., vol. 16, #11, Apr. 1974, p. 3642.

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