Method for preventing silicide residue formation in a semiconduc

Details Method for preventing silicide residue formation in a semiconduc Method for preventing silicide residue formation in a semiconduc

1998-05-12

2000-06-13

Niebling, John F.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438588, 438592, 438593, 438655, 438657, 438669, 438683, 438114, 438738, H01L 21461, H01L 214763

Patent

active

060749563

ABSTRACT:
An etching process is provided for etching through a tungsten silicide layer and an underlying polysilicon layer during the formation of a control gate in a semiconductor device. The etching process prevents the formation of a tungsten silicide residue while etching a layer of tungsten silicide, by employing a plasma that exhibits strong physical sputtering capabilities. The plasma effectively etches away exposed portions of the silicide layer, especially in narrow patterned regions. The plasma exhibits an etching selectivity (ratio of tungsten silicide etch rate to polysilicon etch rate) that is less than about 1.0.

REFERENCES:
patent: 4443930 (1984-04-01), Hwang
patent: 5342801 (1994-08-01), Perry et al.
patent: 5792710 (1998-08-01), Yoshida et al.
patent: 5851926 (1998-12-01), Kumar et al.
patent: 5880033 (1999-03-01), Tsai

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