Method of preventing copper dendrite formation and growth

Details Method of preventing copper dendrite formation and growth Method of preventing copper dendrite formation and growth

1998-11-25

2000-06-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438754, 438756, 438757, 252 794, H01L 2100

Patent

active

060749490

ABSTRACT:
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP. Embodiments include removing up to 20 .ANG. of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and de-ionized water.

REFERENCES:
patent: 5662769 (1997-09-01), Schonauer et al.
patent: 5693563 (1997-12-01), Teong
patent: 5840629 (1998-11-01), Carpio

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