Method of forming embedded copper interconnections and embedded

Details Method of forming embedded copper interconnections and embedded Method of forming embedded copper interconnections and embedded

1998-09-18

2000-11-14

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, H01L 23532

Patent

active

061474088

ABSTRACT:
Embedded interconnections of copper are formed by forming insulating layer, forming an embedded interconnections of copper in the insulating layer, making an exposed upper surface of the insulating layer and an exposed surface of the embedded interconnections of copper coplanar according to chemical mechanical polishing, and forming a protective silver film on the exposed surface of the embedded interconnections of copper. These steps are repeated on the existing insulating layer thereby to produce multiple layers of embedded interconnections of copper. The exposed surface of the embedded interconnections of copper is plated with silver according to immersion plating.

REFERENCES:
patent: 4922321 (1990-05-01), Arai et al.
patent: 4996584 (1991-02-01), Young et al.
patent: 5071518 (1991-12-01), Pan
patent: 5250120 (1993-10-01), Takada et al.
patent: 5406120 (1995-04-01), Jones
patent: 5545927 (1996-08-01), Farooq et al.
patent: 5891802 (1999-04-01), Tao et al.

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