Method of making mask pattern utilizing auxiliary pattern forbid

Details Method of making mask pattern utilizing auxiliary pattern forbid Method of making mask pattern utilizing auxiliary pattern forbid

1998-06-12

2000-06-13

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, G03F 900

Patent

active

060747870

ABSTRACT:
A mask pattern including an auxiliary pattern for improving printing accuracy is easily formed. A process of making the auxiliary pattern includes the steps of: providing an auxiliary pattern forbidden region around an original pattern based on the original pattern formed by an original pattern generating means (step S1); providing an auxiliary pattern formation region around the auxiliary pattern forbidden region based on the auxiliary pattern forbidden region provided in step S1 (step S2); and forming an auxiliary pattern of specific width based on the auxiliary pattern formation region provided in step S2 (step S3). Such formation of the auxiliary pattern prevents neighboring two traces of auxiliary pattern from touching or overlapping each other, for example. An auxiliary pattern is easily formed even if an original pattern is a complicated one without repeatability.

REFERENCES:
patent: 5229230 (1993-07-01), Kamon
patent: 5585210 (1996-12-01), Lee et al.
patent: 5849437 (1998-12-01), Yamazaki et al.
patent: 5885747 (1999-03-01), Yamasaki et al.
patent: 5888677 (1999-03-01), Nakae

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