Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1995-11-30
1999-02-16
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
505190, 505310, 505329, 505726, 505842, H01L 2906, H01L 3922
Patent
active
058723684
ABSTRACT:
The order parameter of a superconductor is reduced by injecting spin-polarized carriers into the superconductor. The reduction in the order parameter is used to modulate the critical current of the superconductor. In a typical embodiment, a current is caused to flow through a superconductor. Spin polarized electrons are then injected into the path of the current in the superconductor by biasing a magnetic metal with respect to a terminal of the superconductor. The bias current may be varied to modulate the injection and thus the flow of current through the superconductor.
REFERENCES:
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Auyeung Raymond
Chrisey Doug B.
Horwitz James S.
Johnson Mark
Osofsky Michael
Edelberg Barry A.
McDonnell Tom E.
Tang Alice W.
The United States of America as represented by the Secretary of
Whitehead Jr. Carl W.
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