Process for forming an amorphous silicon film

Details Process for forming an amorphous silicon film Process for forming an amorphous silicon film

1981-03-20

1986-04-08

O'Keefe, Veronica

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

427 39, 427 86, 357 2, H01L 4500

Patent

active

045811130

ABSTRACT:
A process for forming an amorphous silicon film consisting of silicon (Si) and hydrogen (H) bonded in a monohydride state by a cluster ion beam deposition which comprises the step of impinging ionized and non-ionized silicon (Si) and hydrogen (H) upon a substrate within a vacuum chamber in which hydrogen is maintained at a pressure of about 10.sup.-2 Torr or less.

REFERENCES:
patent: 4151058 (1979-04-01), Kaplan et al.
patent: 4152478 (1979-05-01), Takagi
patent: 4227961 (1980-10-01), Takagi
S. R. Ovshinsky, Amorphous Semiconductors Equivalent to Crystalline Semiconductors.

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