Method for measuring lens imaging uniformity

Optics: measuring and testing – Lens or reflective image former testing – For optical transfer function

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Details

356399, 356401, 355 55, G01B 1100

Patent

active

059698071

ABSTRACT:
A method (100) of separating linewidth variations due to reticle generation defects from other linewidth variations at a substrate surface during a pattern transfer process includes generating (102) a test reticle (200) having a first plurality of structures (204) forming a first pattern (202). The method further includes measuring a dimension (104) of two or more of the first plurality of structures (204) on the test reticle (200), thereby creating (106) a first data set representing linewidth variations due to the test reticle generation. A second pattern is transferred (108) to the surface of the substrate, wherein the second pattern includes a second plurality of structures which substantially correspond to the first plurality of structures and a dimension of two or more of the second plurality of structures (110) are measured, thereby creating (112) a second data set representing the linewidth variations at the surface of the substrate. The first and second data sets are then evaluated (114), thereby identifying an amount of contribution to the substrate linewidth variations due to the test reticle generation. A test reticle (200) for measuring the lens imaging uniformity across a lens image field of a pattern transfer apparatus is also disclosed and includes a plurality of test structures (204). At least one of the test structures has a different design linewidth different than the others of the plurality of test structures, and when the plurality of test structures are measured, linewidth measurements are collected for more than one design linewidth, thereby generating a first data set. When patterns corresponding to the plurality of test structures are transferred to a substrate via the pattern transfer apparatus, a plurality of substrate structures are formed on the substrate and when the plurality of substrate structures are measured, linewidth measurements are collected for more than one patterned linewidth, thereby generating a second data set. The first and second data sets are then utilized to interpolate components of linewidth variations at a nominal linewidth.

REFERENCES:
patent: 5850279 (1998-12-01), Nara et al.
"Pattern transfer at k.sub.1 =0.5: Get 0.25 .mu.m lithography ready for manufacturing", Wilhelm Maurer, Kjmihiro Satoh, Don Samuels and Thomas Fischer, SPIE, vol. 2726, pp. 113-124.
Silicon Processing for the VLSI Era, vol. 1--Process Technology, "Lithography I: Optical Photoresist Material and Process Technology" Chapter 12, S. Wolf and R. N. Tauber, pp. 407-409.
Silicon Processing for the VLSI Era, vol. 1--Process Technology, "Lithography II: Optical Aligners and Photomasks" Chapter 13, S. Wolf and R. N. Tauber, pp. 459-489.

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