Inverted field circular magnetron sputtering device

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

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2042982, 20429809, 20429808, 20439816, 20429817, 20429812, C23C 1435

Patent

active

061465097

ABSTRACT:
An inverted field circular planar magnetron sputtering device is described that produces coatings with a high degree of thickness uniformity on round wafer-like substrates. It is a compact source with no moving mechanical parts. DC signals applied to low power electromagnetic coils provide control of the coating thickness uniformity throughout the life of the target. AC signals applied to the coils oscillate the sputtering rings to improve target utilization and maintain a clean target surface. Utilization of target material is about 40% for both magnetic and non-magnetic target materials. The design accommodates versions for both direct and indirect water cooling.

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J. Wilson and R. Potter, "Performance Of A Variable-Plasma Computer-Controlled Sputtering Source", Surface and Coatings Technology 72(1995) pp. 196-199.

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