Thin film light emitting diode, photonic circuit employing said

Details Thin film light emitting diode, photonic circuit employing said Thin film light emitting diode, photonic circuit employing said

1986-10-20

1987-09-22

Edlow, Martin H.

357 17, 357 2, 357 32, 357 30, 357 59, H01L 3112, H01L 3116

Patent

active

046958592

ABSTRACT:
A light emitting, thin film p-i-n diode characterized by aligned valence bands at the p-i interface and aligned conduction bands at the n-i interface and preferably including a layer of p-doped microcrystalline semiconductor alloy material. A photonic circuit fabricated as an integrated, solid state structure which includes a multilayered thin film light emitting element formed of semiconductor alloy material and a multilayered thin film light detecting element formed of semiconductor alloy material. The photonic circuit is particularly adapted for use as an integrated large area imager adapted to generate electrical signals corresponding to the image on an image-bearing document.

REFERENCES:
patent: 4527179 (1985-07-01), Yamazaki
patent: 4581744 (1986-04-01), Takamiya et al.
patent: 4591893 (1986-05-01), Yamazaki

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