Semiconductor device

Details Semiconductor device Semiconductor device

1984-08-20

1987-09-22

James, Andrew J.

357 237, 357 71, H01L 2712

Patent

active

046958568

ABSTRACT:
A semiconductor device, and more particularly a technique for forming the substrate thereof, is provided for the purpose of preventing the occurrence of crystal devects during recrystallization. To accomplish this, while the surface of an insulator on which a material to be recrystallized is flattened, a semiconductor layer which is employed for another use, e.g., the interconnection between elements or the gate electrode of a MOS transistor, is disposed in the insulator. Owing to the flattened insulator, the occurrence of the crystal defects in the recrystallization of the material can be prevented.

REFERENCES:
patent: 3373323 (1968-03-01), Wolfrum et al.
patent: 3393088 (1968-07-01), Manasevit
patent: 3484662 (1969-12-01), Hagon
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4185294 (1980-01-01), Sumitomo
patent: 4199777 (1980-04-01), Maruyama
patent: 4404735 (1983-09-01), Sakurai
patent: 4412242 (1983-10-01), Herman et al.

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