Semiconductor structures, methods for controlling their conducti

Details Semiconductor structures, methods for controlling their conducti Semiconductor structures, methods for controlling their conducti

1996-04-15

1998-04-21

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257611, H01L 29167, H01L 29207, H01L 29227

Patent

active

057420920

ABSTRACT:
A semiconductor structure, in which the concentrations of impurities are in such a ratio that the amount of carriers produced by an impurity of a first type of conductivity compensated by a third impurity is essentially equal to or exceeds by no more than one order of magnitude the amount of carriers produced by an impurity of the second type of conductivity. A method for controlling such a semiconductor structure (1) is provided, in which the value of the current forming a current path or filament (7) is set in a range, in which a periodic variation of the conductivity in the zone of the current filament (7) is produced. The variation leads to a change of the conductivity of the entire semiconductor structure (1) so that a train of pulses is generated at the output of the semiconductor structure (1). When the amount of carriers produced by the impurity of the first type of conductivity compensated by the third impurity exceeds the amount of carriers produced by the impurity of the second type of conductivity, it is necessary to apply an external effect to the structure (1) to produce the variation of conductivity. The frequency of variation of the conductivity in the zone of the current filament can be controlled by applying at least one external effect in the structure.

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