Monolithic semiconductor integrated circuit with programmable el

Details Monolithic semiconductor integrated circuit with programmable el Monolithic semiconductor integrated circuit with programmable el

1984-12-14

1987-09-22

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200B, 3072021, 307296R, G05F 316

Patent

active

046957456

ABSTRACT:
An integrated circuit includes a plurality of threshold-value compensatory programmable elements integrally incorporated into a semiconductor integrated circuit, wherein, during the inspection process after assembly, the programmable elements store stationary data related to varied threshold voltages occurred during assembly process so that the varied substrate bias voltages can be restored to an ideal level by applying compensations as required. This circuit is extremely advantageous in that it effectively compensates for even the slightest variation of the threshold voltage in the integrated circuit using its extremely simplified circuit configuration, and in light of the conventional tendency in which redundant circuits containing a variety of chip parts each having a substantial area are used, against the needs for high-density part installation, the circuit embodied by the present invention effectively and securely provides means for realizing higher yield of monolithic semiconductor integrated circuits.

REFERENCES:
patent: 4100437 (1978-07-01), Hoff, Jr.
patent: 4229667 (1980-10-01), Heimbigner et al.
patent: 4322675 (1982-03-01), Lee et al.
patent: 4435652 (1984-03-01), Stevens
patent: 4593203 (1986-06-01), Iwahashi et al.
Harroun, "Substrate Bias Voltage Control", IBM Tech. Disc. Bull., vol. 22, No. 7, Dec. 1979, pp. 2691-2692.

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