Fishing – trapping – and vermin destroying
Patent
1996-08-15
1998-04-21
Chaudhari, Chandra
Fishing, trapping, and vermin destroying
437201, 437235, H01L 218242
Patent
active
057417229
ABSTRACT:
A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.
REFERENCES:
patent: 5223448 (1993-06-01), Su
patent: 5270238 (1993-12-01), Kim
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5504041 (1996-04-01), Summerfelt
"A Stacked Capacitor With (Ba.sub.x Sr.sub.1-x)TiO.sub.3 for 256M DRAM", Koyama et al., IEDM 91, pp. 823-826, 1991.
"A Newly Designed Planar Stacked Capacitor Cell with High dielectric Constant Film for 256Mbit DRAM", Eimori et al., IEDM 93, pp. 631-634, 1993 .
Chaudhari Chandra
LG Semicon Co. Ltd.
LandOfFree
Method for manufacturing DRAM device using high dielectric const does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing DRAM device using high dielectric const, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing DRAM device using high dielectric const will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2057189