Method of making a semiconductor laser CRT

Details Method of making a semiconductor laser CRT Method of making a semiconductor laser CRT

1985-05-28

1987-09-22

Straub, Gary P.

Fishing, trapping, and vermin destroying

148DIG95, 156605, 156610, H01L 2120, H01L 2136

Patent

active

046953329

ABSTRACT:
Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam direction is essentially parallel to the e-beam direction and hence is scannable.

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