Semiconductor diode laser, in particular a laser amplifier, and

Coherent light generators – Particular active media – Semiconductor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

359344, 372 92, H01S 306

Patent

active

057373523

ABSTRACT:
The invention relates to a III-V laser (amplifier) with an active region (4A) which encloses a small angle with the end faces (50, 51), is separated therefrom by a preferably current-blocking cladding layer (5) and has a tapering end (40) of which a first side face (42) coincides with a side face (42) of the remainder of the strip-shaped active region (4A), while a second side face (43) thereof encloses an acute angle with the perpendicular to the end faces (50, 51). Such a laser has an amplification ripple, which is undesirable. In a laser according to the invention, the second side face (43) of the tapering portion (40) encloses an angle with the perpendicular to the end face (50, 51) which lies between 0.degree. and 30.degree., preferably between 0.degree. and 10.degree., and which is preferably approximately 0.degree.. The laser according to the invention has a particularly low reflection, as a result of which said amplification ripple is absent or at least very small. No differences in growing processes against said side faces occur since both the first and the second side face (42, 43) of the active region (4A) are mutually substantially parallel. Accordingly, the laser is preferably of the buried hetero type. In that case, the growth around the active region (4A) is very homogeneous, which benefits the yield and quality of the lasers. The laser is preferably constructed as an amplifier, for which purpose the end faces (50, 51) are provided with an anti-reflection layer. The invention, finally, also relates to a method by which the desired laser is obtained in a simple manner.

REFERENCES:
patent: 4432091 (1984-02-01), Kuroda et al.
patent: 4856014 (1989-08-01), Figueroa et al.
patent: 4901123 (1990-02-01), Noguchi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor diode laser, in particular a laser amplifier, and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor diode laser, in particular a laser amplifier, and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor diode laser, in particular a laser amplifier, and will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-20549

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.