Method of manufacturing an insulation layer having a flat surfac

Details Method of manufacturing an insulation layer having a flat surfac Method of manufacturing an insulation layer having a flat surfac

1996-11-01

1997-12-16

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437228, 437235, 437238, 1566281, 1566361, 1566621, H01L 21316

Patent

active

056984677

ABSTRACT:
In a method of manufacturing an insulation layer on a semiconductor substrate, a first insulation film is deposited on the semiconductor substrate more thicker than a wiring layer formed on the semiconductor substrate. The first insulation film is mechano-chemically polished to expose a void formed in the first insulation film. The first insulation film is etched to widen an entrance portion of the void. A second insulation film is formed on the first insulation film to be embedded into the void. The second insulation film is etched at least to the first insulation film, with a part of the second insulation film left within the void. The exposed first insulation film and the left second insulation film has a flat surface.

REFERENCES:
patent: 5244841 (1993-09-01), Marks et al.
patent: 5302233 (1994-04-01), Kim et al.
patent: 5494854 (1996-02-01), Jain

Affiliated with

Also associated with

Rating

Method of manufacturing an insulation layer having a flat surfac does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing an insulation layer having a flat surfac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing an insulation layer having a flat surfac will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-205488