Semiconductor laser including ridge structure extending between

Details Semiconductor laser including ridge structure extending between Semiconductor laser including ridge structure extending between

1996-06-03

1998-04-07

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

057373515

ABSTRACT:
A method of fabricating a semiconductor laser includes successively growing a lower cladding layer of a first conductivity type, an active layer having a superlattice structure, a first upper cladding layer of a second conductivity type, an etch stopping layer of the second conductivity type, and a second upper cladding layer of the second conductivity type on a semiconductor substrate of the first conductivity type; diffusing a dopant impurity into parallel stripe-shaped regions of the active layer to disorder the superlattice structure of the active layer in these regions; etching the second upper cladding layer to expose the etch stopping layer without exposing the etch stopping layer on the disordered regions, thereby producing a stripe-shaped ridge structure extending perpendicular to the disordered regions; and growing a current blocking layer on the etch stopping layer and on the disordered regions, contacting both sides of the ridge structure. Since an etchant used for patterning does not contact the etch stopping layer on the disordered regions of the active layer, unwanted penetration of the etch stopping layer is avoided.

REFERENCES:
patent: 5020067 (1991-05-01), Okada
patent: 5020068 (1991-05-01), Isshiki
patent: 5151913 (1992-09-01), Ueno
patent: 5343486 (1994-08-01), Itaya et al.
patent: 5469457 (1995-11-01), Nagai et al.

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