Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1989-11-21
1992-11-03
Wojciechowicz, Edward J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 36, 257 38, H01L 3922
Patent
active
051609835
ABSTRACT:
Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side on which the superconducting electrode is formed. A superconducting current which flows between the superconducting electrodes across the semiconductor is controlled by an electric signal which is applied to the control electrode, thereby enhancing the current gain.
REFERENCES:
patent: 4888629 (1989-12-01), Harada et al.
Harada Yutaka
Kawabe Ushio
Miyake Mutsuko
Nishino Toshikazu
Yano Shinichiro
Hitachi , Ltd.
Wojciechowicz Edward J.
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