Method for manufacturing high voltage semiconductor device

Details Method for manufacturing high voltage semiconductor device Method for manufacturing high voltage semiconductor device

1996-02-28

1997-12-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 26, 437 57, 437 75, H01L 218238

Patent

active

056984570

ABSTRACT:
A high voltage semiconductor device includes a low voltage CMOSFET and a p-channel high voltage MOSFET having a drain formed in a p-well and a source in an n-well. The p-well has a bottom flush with the bottom of the n-well, and a heavily doped n-well is further provided at the bottom surface of the p-well at least a part of the bottom surface of the n-well. The high voltage MOSFET has a large rated voltage and is suited for fabrication in a finer structure.

REFERENCES:
patent: 4923824 (1990-05-01), Fertig et al.
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5356822 (1994-10-01), Lin et al.
Ghandhi, "VLSI Fabricaton Principles, Silicon and Gellium Arsenide", 1983, pp. 346-348.
Wolf, "Silicon Processing for the VLSI Era, vol. 2;" 1990, pp. 383-386.

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