Semiconductor wafer and method of manufacturing same

Details Semiconductor wafer and method of manufacturing same Semiconductor wafer and method of manufacturing same

1998-05-26

2000-10-31

Mulpuri, Savitri

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

H01L 21205

Patent

active

061402133

ABSTRACT:
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4579601 (1986-04-01), Samata et al.
patent: 4766086 (1988-08-01), Ohshima et al.
patent: 4885257 (1989-12-01), Matsushita
patent: 5098852 (1992-03-01), Niki et al.
patent: 5130260 (1992-07-01), Suga et al.
patent: 5194395 (1993-03-01), Wada
patent: 5250495 (1993-10-01), Bean et al.
patent: 5284031 (1994-02-01), Watanabe et al.
patent: 5405803 (1995-04-01), Kusaka
patent: 5453385 (1995-09-01), Shinji

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