Flash memory cell and a new method for sensing the content of th

Details Flash memory cell and a new method for sensing the content of th Flash memory cell and a new method for sensing the content of th

1998-03-26

2000-07-18

Mai, Son

Static information storage and retrieval

Floating gate

Particular biasing

36518521, G11C 1604, G11C 1606

Patent

active

060916362

ABSTRACT:
A method for sensing the content of a FLASH memory cell, and a new FLASH memory cell structure that is suitable for use with this new sensing scheme. In a first aspect, a semiconductor memory cell comprises a lightly doped n-region including a channel region; a first insulating layer overlying portions of said n-region; a floating gate overlying said first insulating layer; a second insulating layer overlying said floating gate; and a control gate overlying second insulating layer.

REFERENCES:
patent: 5617357 (1997-04-01), Haddad et al.
patent: 5694356 (1997-12-01), Wong et al.
patent: 5805499 (1998-09-01), Haddad

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