Semiconductor memory device having a multi-step pulse generation

Details Semiconductor memory device having a multi-step pulse generation Semiconductor memory device having a multi-step pulse generation

1999-04-20

2000-07-18

Han, Jessica

Electric power conversion systems

Current conversion

With voltage multiplication means

307110, H02M 318

Patent

active

060916133

ABSTRACT:
A voltage generation circuit of a semiconductor memory device has a charge pump circuit for supplying a voltage required to operate the semiconductor memory device; a voltage divide circuit having a plurality of capacitors and connected to the output of the charge pump circuit to divide the output of the charge pump circuit; an initialization means for discharging charges charged to the plurality of capacitors according to a reset signal; and a differential amplifier for controlling the charge pump circuit according to the result of comparison of the voltage divide circuit and a reference voltage.

REFERENCES:
patent: 5168174 (1992-12-01), Naso et al.
patent: 5563824 (1996-10-01), Miyawaki et al.
patent: 5638326 (1997-06-01), Hollmer et al.
patent: 5719807 (1998-02-01), Sali et al.

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