System and method for measuring charge traps within a dielectric

Details System and method for measuring charge traps within a dielectric System and method for measuring charge traps within a dielectric

1994-09-29

1996-05-21

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324752, G01R 3102

Patent

active

055193340

ABSTRACT:
A method and device are provided for characterizing dielectrics formed upon and within an integrated circuit. The methodology includes exciting charge carriers trapped at dielectric charge traps with increasing discrete levels of energy. The energy is provided as discrete levels of photon energy. For the photons to penetrate the dielectric, a transparent conductive material is used instead of a typical gate metal. When the charge carriers are excited out of trap, an applied bias moves the carriers as current through the dielectric. From the amount of current at each discrete energy level, the type and quantity of charge carriers can be determined with rapidity and precision.

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E. H. Nicollian and J. R. Brews, MOS Physics and Technology, (1982) pp. 424-443.
E. H. Nicollian and J. R. Brews, MOS Physics and Technology, (1982) pp. 531-553.

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