Ion implanters for implanting shallow regions with ion dopant co

Details Ion implanters for implanting shallow regions with ion dopant co Ion implanters for implanting shallow regions with ion dopant co

1998-04-13

2000-10-31

Mills, Gregory

Coating apparatus

Gas or vapor deposition

With treating means

118715, 31511181, C23C 1600, H01J 2700

Patent

active

061386065

ABSTRACT:
An ion source apparatus is disclosed in this invention. The ion source apparatus includes an anode having an interior space for containing a plasma and an opening into the space. The ion source apparatus further includes a hollow cathode within the space. The ion source apparatus further includes a dopant ion-source composed of compounds comprising element selected from a group of elements consisting of silicon and germanium, the dopant ion-source disposed next to the space. The ion source apparatus further includes a voltage means connected to the anode, the hollow cathode, and the dopant ion source for discharging a plasma into the space for bombarding the dopant ion source for generating a dopant ion compound. The ion source apparatus further includes an ion-beam extracting means for extracting the dopant ion compound through the opening. In an alternate preferred embodiment, the ion source apparatus employs an electron beam device to generate the dopant ion compound. In yet another preferred embodiment, the ion source apparatus employs an ion beam device for generating the dopant ion compound.

REFERENCES:
patent: 3955118 (1976-05-01), Flemming
patent: 4377773 (1983-03-01), Hershcovitch et al.
patent: 4941430 (1990-07-01), Watanabe et al.
patent: 5288386 (1994-02-01), Yanagi et al.

Affiliated with

Also associated with

Rating

Ion implanters for implanting shallow regions with ion dopant co does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanters for implanting shallow regions with ion dopant co, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanters for implanting shallow regions with ion dopant co will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2040383