Spin-on-glass filled trench isolation method for semiconductor c

Details Spin-on-glass filled trench isolation method for semiconductor c Spin-on-glass filled trench isolation method for semiconductor c

1994-09-02

1996-05-21

Fourson, George

Fishing, trapping, and vermin destroying

437231, H01L 2176

Patent

active

055189504

ABSTRACT:
A method of field isolation of a semiconductor circuit includes forming a silicon oxide layer over the surface of a substrate, depositing a layer of silicon nitride overlying said silicon oxide layer, patterning said silicon oxide and silicon nitride layers to provide openings and exposing portions of said substrate, forming trench regions in said openings, forming a spin-on-glass (SOG) layer over said silicon nitride layer and in said trench regions, curing and annealing at a first temperature the SOG layer after it is formed, oxidizing the SOG layer at a second temperature, wherein the second temperature is less than first temperature, and patterning the oxidized SOG layer to expose the oxidized SOG layer formed in the trench regions.

REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4994405 (1991-02-01), Jayakar
patent: 5294562 (1994-03-01), Lur et al.
patent: 5362981 (1994-11-01), Sato et al.

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