Maskless method for formation of a field implant channel stop re

Details Maskless method for formation of a field implant channel stop re Maskless method for formation of a field implant channel stop re

1994-09-26

1996-05-21

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 437 45, H01L 21265

Patent

active

055189415

ABSTRACT:
This invention provides a method of forming a field implant channel stop region and a device using a field implant channel stop region to improve isolation between devices in integrated circuits using field effect transistors. The field implant channel stop region is formed without the use of an extra mask or extra masking steps by means of either a large angle tilted ion implant beam or a higher energy normally directed ion implant beam. The field implant channel stop region is formed with the mask used to form the light doped drain region in place. The field implant channel stop region forms a local increase in the doping level in the device well thereby forming the channel stop region.

REFERENCES:
patent: 4984196 (1991-01-01), Tran et al.
patent: 5124271 (1992-06-01), Havemann
patent: 5374845 (1994-12-01), Havemann
patent: 5396096 (1995-03-01), Akamatsu et al.

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