Silicon vacuum electron devices

Electric lamp and discharge devices – Photosensitive – Having a control electrode

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313495, 313529, 357 13, H01L 2990, H01J 4016

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active

046833994

ABSTRACT:
A vacuum electron device including a semiconductor device in a hermetically sealed container enclosing a vacuum. The device includes an electron emissive source for emitting electrons into the vacuum, and a collector for collecting electrons emitted from the electron emissive source and tranported through the vacuum. The device is subjected to a high internal electric field such that electrons in the emissive source are excited to energies greater than the electron affinity of the semiconductor body.

REFERENCES:
patent: 2960659 (1960-11-01), Burton
patent: 3458744 (1969-07-01), Jowers et al.
patent: 4099198 (1978-07-01), Howorth et al.
patent: 4259678 (1981-03-01), Van Gorkom et al.
patent: 4303930 (1981-03-01), Van Gorkom et al.
"Power FETs and Their Applications", Edwin S. Oxner, Prentice-Hall, Inc., 1980.

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