Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1997-06-16
2000-07-18
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438692, 438738, 438743, H01L 21762, H01L 21302
Patent
active
060906839
ABSTRACT:
The invention comprises processing deposited oxide and grown oxide materials. In one implementation, a substrate is provided to have outwardly exposed grown oxide material and having deposited oxide material. The grown oxide material is etched substantially selective relative to the deposited oxide material. In another considered aspect, a silicon surface is thermally oxidized to form substantially undoped silicon dioxide over a substrate. A substantially undoped silicon dioxide layer is chemical vapor deposited over the substrate, with at least some of the thermally grown silicon dioxide being outwardly exposed. The exposed thermally grown silicon dioxide layer is vapor etched substantially selective relative to the deposited silicon dioxide layer using an etch chemistry comprising substantially anhydrous HF and an organic primer.
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Fourson George
Micro)n Technology, Inc.
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