Magnetoresistive device

Details Magnetoresistive device Magnetoresistive device

1998-04-30

2000-07-18

Kiliman, Leszek

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

428336, 428692, 428694R, 428694T, 428694TS, 428694TM, 428900, 360113, 324252, G11B 566

Patent

active

060904801

ABSTRACT:
An under layer 101, a first free magnetic layer 102, a non-magnetic layer 104, a fixed magnetic layer 106 and an anti-ferromagnetic layer 107 are formed in the mentioned order on a substrate 100. The under layer 11 is a laminate layer 101 is a laminate layer constituted by two or more metal layers of different materials. The metal layers are formed by using a member or an alloy of two or more members of the metal group consisting of Ta, Hr, Zr, W, Cr, Ti, Mo, Pt, Ni, Ir, Cu, Ag, Co, Zn, Ru, Rh, Re, Au, Os, Pd, Nb and V.

REFERENCES:
patent: 5549978 (1996-08-01), Iwesako
S. Oikawa, et al., "Physical Properties of Spin-Valve Materials--Dependence on Preparation Method, Materials, and Annealing Condition-", Sanyo Electric Co., Ltd., New Materials Research Center, Jan., 1997, pp. 21-27.
D. A. Thompson et al., "Thin Film Magnetoresistors in Memory, Storage, and Related Applications", IEEE Transactions on Magnetics, vol. MAG-11, No. 4, Jul. 1975, pp. 1039-1050.

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