Method for forming a deposited film

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 531, 427 541, 427 86, B05D 306

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046831444

ABSTRACT:
A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.
A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.

REFERENCES:
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patent: 3661637 (1972-05-01), Sirtl
patent: 4217234 (1980-08-01), Ovshinsky et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4374182 (1983-02-01), Gaul et al.
patent: 4448801 (1984-05-01), Fukuda et al.
patent: 4495218 (1985-01-01), Azuma et al.

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