Surface treatment of semiconductor substrates

Details Surface treatment of semiconductor substrates Surface treatment of semiconductor substrates

1998-12-09

2000-07-18

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

Including regeneration, purification, recovery or separation...

134 17, 134 21, 134 31, B08B 300, B08B 500

Patent

active

060902175

ABSTRACT:
Surface cleaning, chemical treatment and drying of semiconductor substrates is carried out using foam as a medium instead of a condensed phase liquid medium. In cleaning and chemical treatment, by introducing a foam into an overflow vessel the foam is caused to pass over the substrate in moving contact therewith. Drying of the substrate is carried out, using a water solution of carbon dioxide in a pressurizable vessel. By releasing the pressure in the vessel, a layer of foam is established on the surface of the solution. The solution is discharged from the vessel, causing the foam layer to pass over the substrate in moving contact therewith. The carbon dioxide reduces the surface tension of the water, thereby enabling the foam layer to be produced and also assisting in the elimination of water from the surface of the substrate. In both cases, the use of foam reduces materials requirements and also reduces the quantity of particles deposited onto the substrate in the treatment process.

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patent: 5968202 (1999-10-01), Verbiest et al.

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