Stackable high density interconnection mechanism (SHIM)

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

174264, 29831, 361792, H05K 100

Patent

active

052451356

ABSTRACT:
A high density of interconnection sites on a dielectric substrate is provided by producing a laminated assembly with multiple layers of conductors (11, 21) positioned one above the other within the substrate (8). Each conductor (11, 21) terminates at a raised feature (12, 22) projecting beyond the surface of the substrate (8) for connection in an electrical circuit. This permits the conductors (11, 21) to be positioned in the same plane perpendicular to the substrate (8) so that two rows of termination pads (12, 22) may be provided without leaving space between the pads of one for the conductors of the other. Efficient, high speed impedance matching may be accomplished by the addition of a grounding conductor (26) between two signal layers of circuitry within the substrate, also provided with raised features (27) extending to the exterior of the substrate (8).

REFERENCES:
patent: 3516156 (1970-06-01), Sternko
patent: 3795047 (1974-03-01), Abolafia et al.
patent: 4813129 (1989-03-01), Karnezos
patent: 4864722 (1989-09-01), Lazzarini et al.
patent: 4902606 (1990-02-01), Patraw
patent: 5121299 (1992-06-01), Frankeny et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Stackable high density interconnection mechanism (SHIM) does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stackable high density interconnection mechanism (SHIM), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stackable high density interconnection mechanism (SHIM) will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2028897

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.