Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-11-21
1993-09-14
Weisstuch, Aaron
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419224, 505731, 505782, H01L 3924, C23C 1435
Patent
active
052448738
ABSTRACT:
A process for preparing a single crystal thin film made of oxide superconductor of Bi, Sr, Ca, and Cu on a substrate by a sputtering method using a target made of a sintered oxide of Bi, Sr, Ca, and Cu and having its c-axis oriented in parallel with the surface of the substrate.
The sputtering is effected by 90.degree. off-axis magnetron sputtering at a substrate temperature between 500.degree. C. and 750.degree. C. at a gas pressure between 0.001 Torr and 1 Torr.
REFERENCES:
patent: 4963524 (1990-10-01), Yamazaki
patent: 5032571 (1991-07-01), Takemura
Hattori Hisao
Higaki Kenjiro
Itozaki Hideo
Sumitomo Electric Industries Ltd.
Weisstuch Aaron
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