Method for fabricating adjacent conducting and insulating region

Details Method for fabricating adjacent conducting and insulating region Method for fabricating adjacent conducting and insulating region

1980-07-28

1982-07-13

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 148187, 357 52, 357 58, 357 91, H01L 21263, H01L 2126

Patent

active

043392857

ABSTRACT:
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.

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