Method of simultaneously forming buried resistors and bipolar tr

Details Method of simultaneously forming buried resistors and bipolar tr Method of simultaneously forming buried resistors and bipolar tr

1982-02-17

1983-12-06

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 357 34, 357 51, H01L 2174

Patent

active

044184697

ABSTRACT:
A method of making at a relatively low temperature, a resistor region of a high sheet resistance, solely or together with other circuit devices such as bipolar transistors in an IC chip, with the step of forming a buried resistor layer inside a semiconductor substrate at a predetermined depth by an ion implantation, wherein the resultant resistor region has a well-controlled high sheet resistance and the obtained bipolar transistors have a well-improved high frequency characteristics.

REFERENCES:
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4075039 (1978-02-01), Sloan, Jr.
patent: 4228450 (1980-10-01), Anantha et al.

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