Method for manufacturing a semiconductor device with a metallic

Details Method for manufacturing a semiconductor device with a metallic Method for manufacturing a semiconductor device with a metallic

1996-06-28

1997-12-30

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437190, 437192, 437194, H01L 2144

Patent

active

057029830

ABSTRACT:
A method for manufacturing a semiconductor device having a metallic interconnection layer is described. The method includes the steps of providing a substrate having an insulating film, forming at least one contact hole in the insulating film, forming a first metallic interconnection layer on the insulating film so that the contact hole is filled with the interconnection layer, and forming a second metallic interconnection layer on the first layer to provide a builtup structure. The second layer may be formed by a high temperature sputtering method wherein a substrate temperature is 400.degree. C. or over or by a procedure which includes forming a second metallic interconnection layer by an ordinary sputtering method and heating the substrate to a temperature not lower than 450.degree. C. to cause the second layer to be reflown. By this, the second has a smooth surface irrespective of the presence of irregularities on the surface of the first layer.

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