Non-volatile memories programmable by "hot carrier" tunnel effec

Details Non-volatile memories programmable by "hot carrier" tunnel effec Non-volatile memories programmable by "hot carrier" tunnel effec

1998-10-15

2000-10-03

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular biasing

36518523, 36518533, G11C 1604

Patent

active

061282227

ABSTRACT:
A Flash-EPROM type memory cell with a short read time and a "very low supply voltage." The memory cell has the additional advantage of using less power, therefore generating less heat and allowing a denser integrated circuit. The memory cell comprises a floating-gate transistor whose source is coupled to the drain of a selection transistor. The floating-gate transistor is in a depleted state when the memory cell is "erased." The read voltage applied to the control gate of the floating-gate transistor is substantially equal to a general supply voltage which is in the range of 1.5 volts. The gate of the selection transistor receives a bias voltage at least equal to its conduction threshold. The gate of the selection transistor can also receive a bias voltage higher than the read voltage, which will speed up the read time further. A Flash-EPROM incorporating this memory cell is also provided.

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French Search Report dated Jun. 16, 1998.

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