Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1994-05-16

1995-11-28

Popek, Joseph A.

Static information storage and retrieval

Floating gate

365218, 257315, G11C 1134

Patent

active

054714230

ABSTRACT:
A non-volatile semiconductor memory device comprises a plurality of semiconductor layers of a first conductivity type, extending parallelly in a column direction and isolated from each other; a plurality of memory cells disposed in a matrix of columns and rows, each having source and drain regions of a second conductivity type, a channel region between the source and drain regions and a gate structure formed on the channel region with a gate insulating layer interposed therebetween and including a floating gate, an interlayer insulating layer, and a control gate. The memory cells are divided into a plurality of groups formed on the semiconductor layers, respectively, so that all the memory cell groups are formed on one of the semiconductor layers and the drain-source circuits of the memory cells of each group are connected to form a series electrical path. A plurality of first bit lines are provided to the plurality of memory cell groups, respectively, each connected to the semiconductor layer on which an associated memory cell group is formed and a plurality of second bit lines are provided to the plurality of memory cell groups, respectively, each second bit line connected to one end of the series electrical path provided to an associated memory cell group. Each of a plurality of word line is connected to the control gates of the memory cell group disposed in one of the rows.

REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5299162 (1994-03-01), Kim et al.
patent: 5299166 (1994-03-01), Suh et al.

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