Method for the fabrication of bipolar transistors

Details Method for the fabrication of bipolar transistors Method for the fabrication of bipolar transistors

1994-08-09

1997-12-30

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437126, 437133, 148DIG11, 148DIG72, H01L 21265

Patent

active

057029580

ABSTRACT:
The invention described herein includes, in one of its forms, a method for fabricating a semiconductor device having ledge material (148, 150, 152, 162) extending over an undercut region. The method comprises the step of forming a layer of material 164 in tensile stress over the undercut region, or region to be undercut. The layer of material in tensile stress can be a dielectric, such as silicon nitride, and provides support for the ledge material in subsequent processing steps.

REFERENCES:
patent: 4839304 (1989-06-01), Morikawa
patent: 5024958 (1991-06-01), Awano
patent: 5296389 (1994-03-01), Shimawaki
patent: 5298438 (1994-03-01), Hill
patent: 5389554 (1995-02-01), Liu et al.
patent: 5434091 (1995-07-01), Hill et al.
patent: 5445976 (1995-08-01), Henderson et al.

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