Planarized material layer deposition using condensed-phase proce

Details Planarized material layer deposition using condensed-phase proce Planarized material layer deposition using condensed-phase proce

1992-06-30

1996-04-02

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437238, 437235, H01L 21268

Patent

active

055040403

ABSTRACT:
A method and system form a globally planar material layer (44) on a semiconductor wafer (32). The method and system consist of a chuck (58) and a chiller (56) to cool down semiconductor wafer (32) to a predetermined temperature in order to condense multiple liquid film layers (38, 40, 42) to produce a globally planar material layer (44) from a suitable condensable process vapor. At least one process energy source (72 and 74) reactively solidifies the liquid films on the semiconductor wafer (32) and may include a remote plasma source, a radio-frequency plasma source, or a photon source. The steps and apparatus for condensing and solidifying the material layer form a progressive globally planar layer on the semiconductor wafer surface.

REFERENCES:
patent: 4927786 (1990-05-01), Nishida

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