Method for forming recessed oxide isolation containing deep and

Details Method for forming recessed oxide isolation containing deep and Method for forming recessed oxide isolation containing deep and

1994-11-15

1996-04-02

Fourson, George

Fishing, trapping, and vermin destroying

437 62, H01L 21302

Patent

active

055040330

ABSTRACT:
Recessed isolation oxide is deposited in shallow trenches simultaneoulsy with oxide deposition in deep isolation trenches. A single planarization of both trench fillings provides efficient recessed isolation oxide without bird's beak or bird's head problems of LOCOS isolation oxide. Self-aligned trench filling by successive conformal depositions of oxide and polysilicon followed by planarization to remove polysilicon away from the trenches. The the remaining polysilicon may be used as an oxide etch mask to remove all of the oxide except in the trenches.

REFERENCES:
patent: 4988639 (1991-01-01), Aomura
patent: 5006482 (1991-09-01), Kerbaugh et al.
patent: 5036021 (1991-07-01), Goto
patent: 5173439 (1993-12-01), Dash et al.
patent: 5270265 (1993-12-01), Hamenway et al.
patent: 5336634 (1994-07-01), Katayama et al.
IBM Technical Disclosure Bulletin, vol. 33, No. 4, Sep. 1990, New York U.S., pp. 210-212, "Shallow Trench Formation Using Polysilicon Trench Refill".
Patent Abstracts of Japan, vol. 015, No. 498, (E-1146), Dec. 17, 1991.
Patent Abstract of Japan, vol. 009, No. 150, (E-324), (1873), Jun. 25, 1985.
H. Nishizawa, et al., "1991 Symposium on VLSI Technology Digest of Technical Papers," Institute of Electrical & Electronics Electronics Engineers Procedings of the Symposium on VLSI Technology, pp. 51-52, (1991).

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