Method of fabricating thin O/N/O stacked dielectric for high-den

Details Method of fabricating thin O/N/O stacked dielectric for high-den Method of fabricating thin O/N/O stacked dielectric for high-den

1994-08-15

1996-04-02

Fourson, George

Fishing, trapping, and vermin destroying

437239, 437242, 437920, 437 52, 437978, H01L 2170

Patent

active

055040217

ABSTRACT:
A method of fabricating a super thin O/N/O stacked dielectric by oxidizing a thin nitride layer in low pressure oxygen for high-density DRAMs is disclosed. A thin nitride layer with a thickness of approximately 20 .ANG. to 60 .ANG. is formed over the surface of a silicon substrate. The nitride layer is oxidized in pure oxygen ambient of 0.01 Torr to 76 Torr at a temperature from 750.degree. C. to 950.degree. C. for approximately 10 to 60 minutes. A super thin oxide
itride/oxide (O/N/O) stacked dielectric exhibiting a low leakage current and high reliability for use in high-density DRAMs is formed by the aforementioned low-pressure dry-oxidation procedure.

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