Method for forming a wiring conductor in semiconductor device

Details Method for forming a wiring conductor in semiconductor device Method for forming a wiring conductor in semiconductor device

1995-05-31

1996-11-05

Quach, T. N.

Fishing, trapping, and vermin destroying

437 20, 437200, H01L 21266, H01L 21283

Patent

active

055717535

ABSTRACT:
In a method for manufacturing a semiconductor device, after a contact holes are formed to pass through an insulator film, a titanium film and a titanium nitride film are deposited on the whole surface including an inner surface of the contact holes. Thereafter, a contact ion implantation is performed to selectively implant impurity ions to the bottom of the contact hole by using a patterned photoresist as a mask, so that an impurity-implanted region is formed at a substrate surface at a bottom of the contact hole.

REFERENCES:
patent: 4339869 (1982-07-01), Reihl et al.
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5094981 (1992-03-01), Chung et al.
patent: 5102827 (1992-04-01), Chen et al.
patent: 5369055 (1994-11-01), Chung

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